ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,695, issued on March 17, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device" was invented by Yusuke Kasahara (Yokkaichi Mie, Japan), Kappei Imamura (Kuwana Mie, Japan), Akifumi Gawase (Kuwana Mie, Japan), Shinji Mori (Nagoya Aichi, Japan) and Akihiro Kajita (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor device includes a first conductive layer between first and second insulating layers with an oxide semiconductor column extending in the first direction through these layers. A third insulating layer covers the column. The column has a first semiconductor portion at a first p...