US Patent Issued to Kioxia on June 30 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,288, issued on June 30, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Satoshi Nagashima (Yokkaichi Mie, Japan), Shota Kashiyama (Mie Mie, Japan), Tadashi Iguchi (Yokkaichi Mie, Japan) and Takuya Nishikawa (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor device includes a stacked film with first insulating films and electrode layers alternately stacked in a first direction. The device further includes a columnar portion extending in the first direction and provided in a first region of the stacked film. The...