US Patent Issued to Kioxia on June 30 for "Oxide semiconductor device and oxide semiconductor memory device" (Japanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,274, issued on June 30, was assigned to Kioxia Corp. (Tokyo).

"Oxide semiconductor device and oxide semiconductor memory device" was invented by Daisuke Matsubayashi (Yokohama Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device of embodiments includes: an oxide semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing the third region; a gate insulating layer provided between the third region and the gate electrode; a first electrode electrically connected to the first region; a second electrode electrically connected to ...