US Patent Issued to Kioxia on June 30 for "NAND flash memory device with improved short circuit prevention" (Japanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,286, issued on June 30, was assigned to Kioxia Corp. (Tokyo).

"NAND flash memory device with improved short circuit prevention" was invented by Satoshi Nagashima (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes first and second conductive layers aligned in a first direction; a memory pillar including first and second portions serving as first and second memory cells in a region where the second conductive layer overlaps the first conductive layer in the first direction; a first insulating member arranged between the first and second conductive layers in a region where the second conductive layer does not over...