US Patent Issued to Kioxia on June 23 for "Memory device" (Japanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,665,032, issued on June 23, was assigned to Kioxia Corp. (Tokyo).

"Memory device" was invented by Takuya Futatsuyama (Yokohama, Japan) and Kenichi Abe (Kawasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a semiconductor column extending above a substrate, a first conductive layer on a first side of the semiconductor column, a second conductive layer on a second side of the semiconductor column, opposite to the first conductive layer, a third conductive layer above or below the first conductive layer and on the first side of the semiconductor column, a fourth conductive layer on the second side of the semiconductor col...