US Patent Issued to Kioxia on July 7 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,409, issued on July 7, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Tatsuki Kikuchi (Yokkaichi Mie, Japan), Keiko Sakuma (Yokkaichi Mie, Japan) and Shosuke Fujii (Kuwana Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor device includes a first insulating layer, a gate electrode layer provided on the first insulating layer, a second insulating layer provided on the gate electrode layer, an oxide semiconductor layer provided along the second insulating layer, the gate electrode layer and the first insulating layer, a gate insulating...