US Patent Issued to Kioxia on Jan. 20 for "Semiconductor substrate, method of manufacturing semiconductor device, and method of manufacturing semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,515, issued on Jan. 20, was assigned to Kioxia Corp. (Minato-ku, Japan).

"Semiconductor substrate, method of manufacturing semiconductor device, and method of manufacturing semiconductor substrate" was invented by Fuyuma Ito (Yokkaichi, Japan), Tatsuhiko Koide (Kuwana, Japan), Hiroki Nakajima (Mie, Japan), Naomi Yanai (Kuwana, Japan), Tomohiko Sugita (Yokkaichi, Japan), Hakuba Kitagawa (Yokkaichi, Japan) and Takaumi Morita (Kuwana, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate includes a surface having a groove. The groove includes an inner bottom surface and an inner wall surface. The inner wall surface has a depres...