US Patent Issued to KIOXIA on Feb. 17 for "Semiconductor device, semiconductor device manufacturing method, and substrate reusing method" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,614, issued on Feb. 17, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device, semiconductor device manufacturing method, and substrate reusing method" was invented by Shunsuke Okada (Suzuka Mie, Japan) and Tatsunori Isogai (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device manufacturing method includes forming a first film containing a first device on a first substrate, forming a second film containing a semiconductor layer on a second substrate, and changing the semiconductor layer into a porous layer. The method further includes forming a third film containing a second device on the second film, and ...