US Patent Issued to Kioxia on Feb. 10 for "Semiconductor storage device with overlapping contacts and surrounding insulating layer" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,707, issued on Feb. 10, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor storage device with overlapping contacts and surrounding insulating layer" was invented by Yasuhito Yoshimizu (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device includes a semiconductor substrate and a conductive layer separated from the semiconductor substrate in a first direction. The conductive layer extends in a second direction parallel to the semiconductor substrate. A semiconductor layer extends in the first direction through the conductive layer. A first contact extends in the first direction and is connected to a sur...