ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,321, issued on Feb. 10, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device including an asymmetrical memory core region" was invented by Yasuhiro Shimura (Yokohama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to embodiments, a semiconductor memory device includes a plurality of control gate electrodes laminated above a substrate and extend in a first direction and a second direction, and a memory pillar that has one end connected to the substrate, has longitudinally a third direction intersecting with the first direction and the second direction, and is opposed to the plurality of control gate electrodes. The memor...