US Patent Issued to KIOXIA on Feb. 10 for "Method for manufacturing semiconductor device and semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,655, issued on Feb. 10, was assigned to KIOXIA Corp. (Tokyo).

"Method for manufacturing semiconductor device and semiconductor device" was invented by Takanobu Ono (Kuwana Mie, Japan), Masaki Sekine (Mie Mie, Japan), Kizashi Tanioka (Yokkaichi Mie, Japan) and Takaaki Akahane (Inabe Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes forming a first stacked body having a plurality of first material films and a plurality of second material films that are alternately stacked, in a divided region of a semiconductor wafer including a chip region in which a semiconductor element is provided ...