US Patent Issued to Kioxia on Dec. 30 for "Semiconductor device and semiconductor device manufacturing method" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,900, issued on Dec. 30, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device and semiconductor device manufacturing method" was invented by Tomotaka Ariga (Yokkaichi, Japan), Masayuki Kitamura (Yokkaichi, Japan) and Hiroshi Toyoda (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device that can have an improved data retention characteristic is provided. A semiconductor device includes a stacked body and a memory pillar formed in a memory hole of the stacked body. The memory pillar has a structure in which a semiconductor portion 61b, a tunnel insulating film 62a, and a charge storage layer 62b are sequentially ...