US Patent Issued to KIOXIA on Dec. 30 for "Memory device with periodically varying memory film thickness" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,901, issued on Dec. 30, was assigned to KIOXIA Corp. (Tokyo).

"Memory device with periodically varying memory film thickness" was invented by Daisuke Nishida (Mie Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode layers and a plurality of insulating layers, the electrode layers and the insulating layers being alternately stacked, and a memory film extending in a stacking direction in the stacked body. The memory film includes an oxide film facing the insulating layers, a block insulating film facing the electrode layers and t...