US Patent Issued to Kioxia on Dec. 2 for "Semiconductor memory device with wiring layer having defined first, second and passing wiring groups" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,052, issued on Dec. 2, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device with wiring layer having defined first, second and passing wiring groups" was invented by Toru Ozawa (Kamakura, Japan) and Yoichi Mizuta (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate includes a first circuit region, a second circuit region, and a third circuit region. A wiring layer includes a first boundary region that includes a first boundary between the first and second circuit regions, a second boundary region that includes a second boundary between the second and the third circuit regions, and a passing wiring re...