US Patent Issued to KIOXIA on Dec. 2 for "Semiconductor memory device and method for manufacturing semiconductor memory device" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,812, issued on Dec. 2, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor memory device and method for manufacturing semiconductor memory device" was invented by Yusuke Mori (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a first wiring, a second wiring, a columnar insulating portion, and a first insulating layer. The first insulating layer includes a first edge. When it is assumed that a position closest to the columnar insulating portion on the first edge is a first position, a position of the first insulating layer, which is different from the first edge and is closest to the columnar i...