ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,422, issued on Dec. 2, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device" was invented by Takeshi Aoki (Ebina Kanagawa, Japan), Masaharu Wada (Yokohama Kanagawa, Japan), Mamoru Ishizaka (Hiratsuka Kanagawa, Japan) and Tsuneo Inaba (Kamakura Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device comprises a memory cell array. The memory cell array comprises sub arrays. The sub array comprises: memory portions; first semiconductor layers electrically connected to memory portions; first gate electrodes respectively facing first semiconductor layers; a first wiring electrically connected to first sem...