ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,472, issued on Dec. 2, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor device and semiconductor memory device" was invented by Ha Hoang (Mie, Japan), Kazuhiro Matsuo (Mie, Japan) and Kenichiro Toratani (Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In general, according to one embodiment, a semiconductor device includes first to third conductors, a semiconductor, a first insulator, and an insulation region. The semiconductor includes a metal oxide and extends in the first direction to be in contact with the first conductor and the third conductor. The insulation region is surrounded by the semiconductor and extends in the first direc...