US Patent Issued to KIOXIA on Aug. 25 for "Semiconductor device with improved write characteristics" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,751, issued on Aug. 25, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device with improved write characteristics" was invented by Tatsunori Isogai (Yokkaichi Mie, Japan), Fumiki Aisou (Nagoya Aichi, Japan) and Masaki Noguchi (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a stacked body, a semiconductor layer, a first insulating film, a first charge storage film, a second charge storage film, and a second insulating film. The stacked body includes an electrode layer and an insulating layer alternately stacked in a first direction. The semiconductor layer is disposed in the stacked body in t...