ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,514,129, issued on Dec. 30, was assigned to Kioxia Corp. (Tokyo) and SK hynix Inc. (Gyeonggi-Do, South Korea).
"Magnetic memory device" was invented by Hyung-Woo Ahn (Seongnam-si, South Korea), Tadaaki Oikawa (Seoul, South Korea), Taiga Isoda (Tokyo), Kenji Fukuda (Seoul, South Korea) and Ku Youl Jung (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a magnetic memory device includes a memory cell. The memory cell includes a switching element, a magnetoresistance effect element, and an electrode that electrically couples the switching element to the magnetoresistance effect element. The electrode include...