US Patent Issued to KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY on March 24 for "III-nitride semiconuctor devices having a boron nitride alloy contact layer and method of production" (Saudi Arabia Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,315, issued on March 24, was assigned to KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Thuwal, Saudi Arabia).

"III-nitride semiconuctor devices having a boron nitride alloy contact layer and method of production" was invented by Haiding Sun (Thuwal, Saudi Arabia) and Xiaohang Li (Thuwal, Saudi Arabia).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a III-nitride semiconductor device involves determining work functions of a first III-nitride contact layer and a first metal contact. The determined work function of the first III-nitride contact layer is based on a group III element of the first III-nitride contact layer. Based...