ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,562,204, issued on Feb. 24, was assigned to Kepler Computing Inc. (San Francisco).

"Non-linear polar material based multi-capacitor bit-cell with shared gain element with series transistor and individual access transistor" was invented by Rajeev Kumar Dokania (Beaverton, Ore.), Mustansir Yunus Mukadam (Seattle), Erik Unterborn (Cary, N.C.), Pramod Kolar (Cary, N.C.), Amrita Mathuriya (Portland, Ore.), Debo Olaosebikan (San Francisco), Tanay Gosavi (Portland, Ore.), Noriyuki Sato (Palo Alto, Calif.) and Sasikanth Manipatruni (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described herein is a memory bit-cell that results in lower leakage ...