US Patent Issued to JX ADVANCED METALS on Oct. 6 for "Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,753,529, issued on Oct. 6, was assigned to JX ADVANCED METALS Corp. (Tokyo).

"Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer" was invented by Kodai Yamagishi (Kitaibaraki, Japan), Shunsuke Oka (Kitaibaraki, Japan) and Kenji Suzuki (Kitaibaraki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is an indium phosphide substrate, a method for manufacturing indium phosphide substrate, and a semiconductor epitaxial wafer capable of suppressing an occurrence of contamination of the surface of the indium phosphide substrate caused by residues at the edge part. An indium phosphide su...