US Patent Issued to JSAB TECHNOLOGIES (SHENZHEN) on Dec. 16 for "Pi-type trench gate silicon carbide MOSFET device and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,646, issued on Dec. 16, was assigned to JSAB TECHNOLOGIES (SHENZHEN) LTD. (Shenzhen, China).

"Pi-type trench gate silicon carbide MOSFET device and fabrication method thereof" was invented by Yong Liu (Shenzhen, China), Hao Feng (Shenzhen, China), Xin Peng (Shenzhen, China) and Johnny Kin On Sin (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure relates to a Pi type trench gate silicon carbide MOSFET device and a fabrication method thereof. To protect a trench gate oxide layer without increasing a channel resistance and process complexity, a second conductivity type of heavily doped deep well inserted with double gate tre...