US Patent Issued to Jiangsu Jichuang Atomic Cluster Technology Research Institute, Nanjing University on Aug. 25 for "Method for doping two-dimensional material based on cluster ion implantation" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,719,017, issued on Aug. 25, was assigned to Jiangsu Jichuang Atomic Cluster Technology Research Institute Co. Ltd. (Nanjing City, China) and Nanjing University (Nanjing, China).

"Method for doping two-dimensional material based on cluster ion implantation" was invented by Fengqi Song (Nanjing City, China), Minhao Zhang (Nanjing City, China), Xueyu Liu (Nanjing City, China), Sichen Tang (Nanjing City, China) and Ning Chen (Nanjing City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for doping a two-dimensional material based on cluster ion implantation, including selecting a two-dimensional material sample to place same on a substrate; de...