ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,932, issued on Aug. 18, was assigned to JCET STATS ChipPAC Korea Ltd. (South Korea).

"Semiconductor device and method of forming EMI shielding material in two-step process using light sintering" was invented by SeungHyun Lee (Incheon, South Korea), HeeSoo Lee (Incheon, South Korea), YongMoo Shin (Incheon, South Korea) and ChangOh Kim (Incheon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device has a substrate and encapsulant deposited over the substrate. An electrical connector is disposed over the substrate outside the encapsulant. An antenna can be formed over the substrate. A first shielding material is disposed ove...