US Patent Issued to JAPAN SCIENCE AND TECHNOLOGY AGENCY on Aug. 25 for "Memory circuit with memory cells having bistable circuit and non-volatile element" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,873, issued on Aug. 25, was assigned to JAPAN SCIENCE AND TECHNOLOGY AGENCY (Kawaguchi, Japan).

"Memory circuit with memory cells having bistable circuit and non-volatile element" was invented by Satoshi Sugahara (Tokyo), Daiki Kitagata (Tokyo) and Shuichiro Yamamoto (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic circuit includes a cell array including memory cells each including a bistable circuit that includes first and second inverter circuits, each having a first mode characterized by there being substantially no hysteresis in transfer characteristics and a second mode characterized by there being hysteresis in the transfer ...