ALEXANDRIA, Va., June 16 -- United States Patent no. 12,655,514, issued on June 16, was assigned to Japan Display Inc. (Tokyo).
"Film formation apparatus and film formation method of gallium nitride film" was invented by Masanobu Ikeda (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A film formation method of a gallium nitride film according to an embodiment of the present invention includes the steps of placing a substrate so as to face a target containing nitride and gallium in a vacuum chamber, heating the substrate, supplying a sputtering gas to the vacuum chamber, supplying a nitrogen radical and a hydrogen radical to the vacuum chamber, and applying a voltage to the target to generate a plasma of...