ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,445, issued on July 7, was assigned to Japan Display Inc. (Tokyo).

"Semiconductor device" was invented by Hajime Watakabe (Tokyo), Masashi Tsubuku (Tokyo), Toshinari Sasaki (Tokyo) and Takaya Tamaru (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to an embodiment of the present invention includes an oxide insulating layer, an oxide semiconductor layer, a gate insulating layer, a gate electrode, and a protective insulating layer. The gate insulating layer includes a first region overlapping the gate electrode and a second region not overlapping the gate electrode. The second region is in contact with the protecti...