ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,834, issued on Dec. 16, was assigned to Japan Display Inc. (Tokyo).
"Semiconductor device" was invented by Toshihiko Itoga (Tokyo) and Takuo Kaitoh (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "The purpose of the present invention is to form a semiconductor device in which an active area laminated on a PZT (lead zirconate titanate (PbZrTiO3) sensor having a piezoelectric effect. The main structure of the present invention is as follows. A semiconductor device having a PZT (lead zirconate titanate (PbZrTiO3)) sensor including: the PZT sensor including a lower electrode formed on a glass substrate, a PZT, an upper electrode, a first inorganic ...