US Patent Issued to Japan Display on Aug. 11 for "Film formation apparatus and film formation method of gallium nitride film" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,703,910, issued on Aug. 11, was assigned to Japan Display Inc. (Tokyo).

"Film formation apparatus and film formation method of gallium nitride film" was invented by Masanobu Ikeda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A film formation apparatus includes a vacuum chamber, a substrate support portion for supporting a substrate, a target support portion for supporting a target containing nitrogen and gallium, a sputtering gas supply unit for supplying a sputtering gas, a sputtering power source for applying a voltage to the target, a first radical supply source for supplying nitrogen radicals and hydrogen radicals, and a control unit. The c...