US Patent Issued to JAPAN ATOMIC ENERGY AGENCY on Feb. 24 for "Negative ion source and negative ion generation method" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,558,663, issued on Feb. 24, was assigned to JAPAN ATOMIC ENERGY AGENCY (Naka-gun, Japan).

"Negative ion source and negative ion generation method" was invented by Akihiro Matsubara (Toki, Japan) and Yoko Kokubu (Toki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a negative ion source and a negative ion generation method capable of providing a high negative ion generation efficiency. A negative ion source includes a housing that includes: an inlet from which a sample is introduced; a plasma generation region communicated with the inlet, a plasma being generated by discharge in the plasma generation region; a negative ion generation re...