ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,882, issued on Oct. 6, was assigned to JAPAN ATOMIC ENERGY AGENCY (Naka-gun, Japan) and TOHOKU UNIVERSITY (Sendai, Japan).
"Thin film inductor element and thin film variable inductor element" was invented by Jun'ichi Ieda (Ibaraki, Japan), Yuta Yamane (Miyagi, Japan) and Shunsuke Fukami (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "It is an object to provide a thin film inductor element using a new type of emergent electromagnetic field, which has a not so high difficulty in selecting materials, and also has a not so high temperature dependency.A thin film inductor element is characterized by including: a stacked layer film including ...