US Patent Issued to JA SOLAR TECHNOLOGY YANGZHOU on April 21 for "Solar cell and manufacturing method thereof, processing method of n-type doped silicon film and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,649, issued on April 21, was assigned to JA SOLAR TECHNOLOGY YANGZHOU Co. LTD. (Yangzhou, China).

"Solar cell and manufacturing method thereof, processing method of n-type doped silicon film and semiconductor device" was invented by Xiaoye Chen (Yangzhou, China), Junbing Zhang (Yangzhou, China) and Wei Shan (Yangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a solar cell and a manufacturing method thereof, a processing method of an n-type doped silicon film, and a semiconductor device. The manufacturing method of the solar cell includes: providing a silicon wafer; forming an n-type doped sil...