US Patent Issued to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION UNIVERSITY) on Feb. 24 for "Thin film transistor comprising crystalline IZTO oxide semiconductor, and method for producing same" (South Korean Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,788, issued on Feb. 24, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION UNIVERSITY) (Seoul, South Korea).

"Thin film transistor comprising crystalline IZTO oxide semiconductor, and method for producing same" was invented by Jae Kyeong Jeong (Seoul, South Korea), Nu Ri On (Seoul, South Korea) and Gwang Bok Kim (Incheon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A crystalline IZTO oxide semiconductor and a thin film transistor having the same are provided. The thin film transistor includes a gate electrode, a crystalline In-Zn-Sn oxide (IZTO) channel layer overlapping the upper or lower portions of the gate electr...