US Patent Issued to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) on May 5 for "Operation method for three-dimensional flash memory including ferroelectric-based data storage pattern and back gate" (South Korean Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,620,444, issued on May 5, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (Seoul, South Korea).

"Operation method for three-dimensional flash memory including ferroelectric-based data storage pattern and back gate" was invented by Yun Heub Song (Seoul, South Korea) and Jea Min Shim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is an operation method for a three-dimensional flash memory including a ferroelectric-based data storage pattern and a back gate. According to an embodiment, the operation method for a program of a three-dimensional flash memory may comprise the steps of: applyi...