US Patent Issued to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) on June 23 for "Method for manufacturing tellurium-based semiconductor device, tellurium-based semiconductor device manufactured thereby, and thin film transistor" (South Korean Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,655, issued on June 23, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (Seoul, South Korea).

"Method for manufacturing tellurium-based semiconductor device, tellurium-based semiconductor device manufactured thereby, and thin film transistor" was invented by Jae Kyeong Jeong (Seoul, South Korea) and Tai Kyu Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a tellurium-based semiconductor device comprises the steps of: preparing a substrate; depositing, on the substrate, a tellurium-based semiconductor material including tellurium and a tellurium oxide so as to f...