US Patent Issued to Invention And Collaboration Laboratory on Aug. 25 for "Semiconductor memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,736, issued on Aug. 25, was assigned to Invention And Collaboration Laboratory Pte. Ltd. (Singapore).

"Semiconductor memory structure" was invented by Chao-Chun Lu (Taipei City, Taiwan) and Chun Shiah (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory structure includes a semiconductor substrate, a plurality of DRAM (dynamic random access memory) cells, a bit line, a sense amplifier, and a local word line. The semiconductor substrate has a top surface. Each DRAM cell includes an access transistor and a storage capacitor. The bit line has a first terminal extended along the plurality of DRAM cells to a second ...