US Patent Issued to International Businesss Machines on Aug. 4 for "Vertically-stacked interdigitated metal-insulator-metal capacitor for sub-20 nm pitch" (New York Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,700,539, issued on Aug. 4, was assigned to International Businesss Machines Corp. (Armonk, N.Y.).

"Vertically-stacked interdigitated metal-insulator-metal capacitor for sub-20 nm pitch" was invented by Hsueh-Chung Chen (Cohoes, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Forming a vertically stacked interdigitated metal-insulator-metal capacitor includes forming a first set of connecting vias within a first dielectric layer disposed above a semiconductor substrate followed by deposition of a first conductive material above the first dielectric layer, the first conductive material fills the first set of connecti...