US Patent Issued to International Business Machines on Sept. 9 for "MRAM bottom electrode contact with taper profile" (New York, Connecticut Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,480, issued on Sept. 9, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"MRAM bottom electrode contact with taper profile" was invented by Ashim Dutta (Clifton Park, N.Y.), Saumya Sharma (Easton, Conn.), Tianji Zhou (Albany, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An MRAM device is provided. The MRAM device includes a semiconductor device comprising a bottom contact electrode (BEC), and an MRAM stack formed on the BEC. A width of an upper portion of the BEC is less than a width of the MRAM stack."

The patent was filed on Dec. 9, 2021, under Application No. 17/643,582.

*For furt...