US Patent Issued to International Business Machines on Sept. 9 for "Co-integrating gate-all-around nanosheet transistors and comb-nanosheet transistors" (New York Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,328, issued on Sept. 9, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Co-integrating gate-all-around nanosheet transistors and comb-nanosheet transistors" was invented by Huimei Zhou (Albany, N.Y.), Julien Frougier (Albany, N.Y.), Nicolas Loubet (Guilderland, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Miaomiao Wang (Albany, N.Y.) and Veeraraghavan S. Basker (Schenectady, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present invention are directed to processing methods and resulting structures for co-integrating gate-all-around (GAA) nanosheets and comb-nanosheets on the same chip, wafer, or substrate. In...