US Patent Issued to International Business Machines on Sept. 22 for "MRAM device with hexagonal shaped electrodes" (New York Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,570, issued on Sept. 22, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"MRAM device with hexagonal shaped electrodes" was invented by Oscar van der Straten (Guilderland Center, N.Y.), Gabriel Rodriguez (Albany, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a magnetic tunnel junction (MTJ) stack, where a cross section of a bottom electrode of the stack includes a hexagonal profile. A semiconductor device including a lower word line, a magnetic tunnel junction (MTJ) stack, where a cross section of a first electrode of the MTJ stack comprises a hexagonal...