US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Oct. 14 for "Top contact on resistive random access memory" (New York Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,480, issued on Oct. 14, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Top contact on resistive random access memory" was invented by Soon-Cheon Seo (Glenmont, N.Y.), Chanro Park (Clifton Park, N.Y.) and Takashi Ando (Eastchester, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including a trench to a first electrically conductive structure; a first electrode of a conformal electrically conductive material contained within the trench in electrical communication with the first electrically conductive structure and is present on sidewalls of the trench; a switching layer is present in the trench on the first...