US Patent Issued to International Business Machines on Oct. 14 for "Asymmetric gate extension in stacked FET" (New York, New Hampshire, Vermont Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,290, issued on Oct. 14, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Asymmetric gate extension in stacked FET" was invented by Ruilong Xie (Niskayuna, N.Y.), Brent A. Anderson (Jericho, Vt.), Junli Wang (Slingerlands, N.Y.), Jay William Strane (Wappingers Falls, N.Y.) and Albert M. Chu (Nashua, N.H.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a stack of transistors with a first transistor on top of a second transistor, where a gate of the first transistor has a first width; a gate of the second transistor has a second...