ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,785, issued on Nov. 11, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Backside power rail with tight space" was invented by Ruilong Xie (Niskayuna, N.Y.), Koichi Motoyama (Clifton Park, N.Y.), Nicholas Anthony Lanzillo (Wynantskill, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A first power rail directly below and connected to a source-drain epitaxy region of a positive field effect transistor (p-FET) region, a second power rail directly below and connected to a source-drain epitaxy region of a negative field effect transistor (n-FET) region, the first power rail and the second powe...