US Patent Issued to International Business Machines on May 19 for "Stacked spin-orbit torque magnetoresistive random access memory" (New York Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,419, issued on May 19, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Stacked spin-orbit torque magnetoresistive random access memory" was invented by Heng Wu (Guilderland, N.Y.), Alexander Reznicek (Troy, N.Y.), Bahman Hekmatshoartabari (White Plains, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a bottom MTJ stack with a bottom fixed layer, a bottom barrier layer, and a bottom free layer. The semiconductor structure also includes a top MTJ stack with a top fixed layer, a top barrier layer, and a top free layer. Additionally, the semiconductor structur...