US Patent Issued to International Business Machines on May 19 for "Semiconductor backside isolation feature for merged epitaxy" (New York Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,487, issued on May 19, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Semiconductor backside isolation feature for merged epitaxy" was invented by Lijuan Zou (Slingerlands, N.Y.), Tao Li (Slingerlands, N.Y.), Ruilong Xie (Niskayuna, N.Y.) and Chanro Park (Clifton Park, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a front-end-of-line level including a plurality of field effect transistors. Each field effect transistor includes source/drain regions located on opposite sides of the field effect transistors. A shallow trench isolation region located between adjacent field effect transistor...