US Patent Issued to INTERNATIONAL BUSINESS MACHINES on May 19 for "Resistive random-access memory device with step height difference" (New York Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,426, issued on May 19, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"Resistive random-access memory device with step height difference" was invented by Hiroyuki Miyazoe (White Plains, N.Y.), Seyoung Kim (White Plains, N.Y.), Asit Ray (Baldwin Place, N.Y.) and Takashi Ando (Tuckahoe, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques facilitating resistive random-access memory device with step height difference are provided. A resistive random-access memory device can comprise a first electrode located within a trench of a dielectric layer. The resistive random-access memory device can also comprise a metal oxide l...