US Patent Issued to International Business Machines on March 31 for "Multi-state ferroelectric-RAM with stacked capacitors" (New York Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,457, issued on March 31, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Multi-state ferroelectric-RAM with stacked capacitors" was invented by Julien Frougier (Albany, N.Y.), Kangguo Cheng (Schenectady, N.Y.), Ruilong Xie (Niskayuna, N.Y.), Chanro Park (Clifton Park, N.Y.) and Min Gyu Sung (Latham, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate and vertically stacked ferroelectric capacitors formed on the substrate. A first ferroelectric capacitor has a different capacitive output than a second ferroelectric capacitor when a constant voltage is applied. First and second electrodes ar...