US Patent Issued to International Business Machines on March 31 for "MRAM device with annular electrodes" (New York Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,614, issued on March 31, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"MRAM device with annular electrodes" was invented by Oscar van der Straten (Guilderland Center, N.Y.), Shanti Pancharatnam (Albany, N.Y.) and Chih-Chao Yang (Glenmont, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a magnetic tunnel junction (MTJ) stack vertically aligned between an annular shaped bottom electrode and an annular shaped top electrode. A semiconductor device including a MTJ stack, vertically aligned between an annular shaped bottom electrode and an annular shaped top electrode, and an encapsulation lay...