ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,846, issued on March 3, was assigned to International Business Machines Corp. (Armonk, N.Y.).
"Wafer dies with thermally conducting perimeter regions" was invented by Mukta Ghate Farooq (Hopewell Junction, N.Y.), Keiji Matsumoto (Yokohama, Japan) and John Knickerbocker (Monroe, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first back-end-of-line region coupled to a first side of a front-end-of-line region, a second back-end-of-line region coupled to a second side of the front-end-of-line region, and a thermally conducting region at least partially surrounding a perimeter of the front-end-of-line region, the...